*Fully automated microprocessor control
*High throughput vacuum load locked
*Programmable, variable electrode spacing
*Endpoint detection
*Can be configured for 3" to 6" wafers
*Bulk head mount configuration
*ENI OEM 6 13.56 MHz
*650W RF Generator. 208 V, 3 Phase, 60 Hz

Fluorine & Chlorine based parallel plate system for etching polysilicon & nitride with endpoint detection
	- Gases available: Cl2, SF6, He, O2, C2F6
	- RF power source: 650W at 13.56MHz
	- Substrate size: 4” single wafer
Polysilicon etch with chlorine based gas
	E/R:             3500A/min        Selectivity to oxide:            25:1
	Uniformity: 5%                     Selectivity to photoresist: 1.3:1
Polysilicon etch with fluorine based gas
	E/R:             4000A/min        Selectivity to oxide:             20:1
	Uniformity: 8%                     Selectivity to photoresist: 1.5:1
Silicon Nitride etch with fluorine based gas
	E/R:             1000A/min        Selectivity to oxide:              3:1
	Uniformity: 8%                     Selectivity to photoresist: 1.3:1